Device Engineer, GaN

What to Expect

• We are seeking a Supplier Industrialization Engineer, Device Engineer
• GaN to strengthen our supply chain product development organization. You will own technical depth on gallium nitride power devices—from wafer fabrication through qualification to end-use applications—and partner with suppliers, internal engineering, and product teams to secure robust, scalable GaN solutions for our products.

What You’ll Do

• Drive deep technical engagement with GaN foundries and IDMs on epi, process flow, device architecture (e.g., p-GaN gate, cascode, MIS-HEMT), and process capability
• Drive manufacturers on failure analysis and root-cause investigations for device- and process-related defects; analyze failure modes (e.g., dynamic RDS(on), threshold shift, gate degradation, TDDB, ESD) and drive corrective action with suppliers and internal quality
• Establish and maintain quality control plans, test procedures, and reliability test protocols (e.g., HTOL, HTRB, TDDB, bias-temperature stress)
• Lead material characterization and process corner studies with suppliers
• Work cross functionally with design and reliability engineering teams, to ensure devices can meet the design and system mission profile requirements
• Establish acceptance criteria for production release and ongoing monitoring of device quality and reliability
• Support application validation: double-pulse testing, switching SOA, gate-drive compatibility, EMI, and board-level reliability considerations
• Advise product and design teams on package options (PQFN, TOLT, embedded, module), and roadmap fit
• Capture field and NPI learnings and feed them into supplier scorecards and next-gen device specs
• Own the technical content of GaN component roadmaps and drive DFM/DFR gates, and change control boards, process node/design rule evaluations, and manufacturing readiness (yield, process control, capacity)

What You’ll Bring

• Degree in Electrical Engineering, Materials Science, Physics, or related field, or equivalent experience
• 4+ years of experience in GaN (or closely related wide-bandgap) device engineering, process integration, reliability, or power semiconductor product engineering
• Strong working knowledge of GaN-on-Si (and/or GaN-on-SiC) epi and HEMT process flows, key unit processes, and how process choices affect device metrics and yield
• Hands-on experience with power-device reliability stress methods, failure analysis interpretation, and qualification to industry or automotive-grade standards
• Familiarity with JEDEC / AEC-Q101 / IPC, JEP180, AQG324, PPAP, TS16949 qualification frameworks
• Experience with statistical process control, DOE, and reliability statistics (Weibull, acceleration models)
• Package/assembly knowledge (wirebond, clip, sintered die attach, advanced power packages)
• Domestic and international travel (expected 25% of the time) is required to engage with suppliers, sometimes on short notice