Process Integration Engineer - Advanced DRAM R&D at Micron

Our vision is to transform how the world uses information to enrich life for all.

Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.

Department Introduction: We are part of Micron’s Technology Development organization, working in an industry-leading 300mm R&D facility to enable future memory scaling. Our team focuses on the performance and manufacturability of ground breaking next-generation memories within the advanced memory architecture organization.

Position Overview: As a Process Integration Engineer, you will lead technology integration activities to enable the manufacturability of brand new Advanced DRAM. You will solve complex integration and circuit issues, directly impacting Micron’s technical roadmap and future device scaling.

Responsibilities:

• Lead technology integration activities for device components such as charge storage devices and thin-film transistors (TFTs).

• Collaborate with multi-functional teams including building, yield improvement, and product engineering to resolve margin issues.

• Build and complete experiments in the R&D fab to optimize process flows.

• Analyze inline, defect, and probe data to improve yield, performance, and reliability while reducing costs.

• Develop creative solutions to meet product requirements and drive team implementation for complex technical problems.

• Communicate technical summaries and project progress to senior leadership and stakeholders.

Minimum Qualifications:

• Bachelor’s degree in Engineering, Physics, or a related technical field.

• Strong background in semiconductor device physics and process integration.

• Proficiency with data analysis, Design of Experiments (DOE), and statistical techniques.

• Detailed knowledge of mainstream memory technologies such as DRAM or NAND.

• Demonstrated ability to lead technical projects and solve complex multi-disciplinary problems.

Preferred Qualifications:

• Master’s degree or PhD in Engineering or a related field.

• Experience with 3D DRAM technology or alternative memory architectures.

• Proven track record in a Technology Development or R&D fab environment.

• Familiarity with circuit and architecture issues as they relate to memory scaling.

As a world leader in the semiconductor industry, Micron is dedicated to your personal wellbeing and professional growth. Micron benefits are designed to help you stay well, provide peace of mind and help you prepare for the future. We offer a choice of medical, dental and vision plans in all locations enabling team members to select the plans that best meet their family healthcare needs and budget. Micron also provides benefit programs that help protect your income if you are unable to work due to illness or injury, and paid family leave. Additionally, Micron benefits include a robust paid time-off program and paid holidays. For additional information regarding the Benefit programs available, please see the Benefits Guide posted on micron.com/careers/benefits.

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.

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To learn more about Micron, please visit

[micron.com/careers](https: //www.micron.com/careers)

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