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Job Description:

Description:

Technology pathfinding and integration engineer supporting multiple RF IC technologies for cellular RF front-end module development. Part of a global team that supports RF semiconductor technology (Ga As HBT, RF-SOI, RF-CMOS, RF-BiCMOS, GaN HEMT) development and design access for RF front end applications. Collaborates with external foundry R&D teams on technology development roadmaps and new technology qualification. Supports internal design, modeling, and quality teams to define and execute technology qualification and insertion plans. Provides ongoing applications support for design and package integration.

The successful candidate will have wide-ranging hands-on experience in RF semiconductor device fabrication and operation, wafer foundry process control, MMIC process integration, new technology qualification, process design kit (PDK) development, RF circuit design and modeling, and RF test development and execution. Has experience with design of experiments, parametric/yield data analysis, and can drive new developments and existing technology improvements at external foundries. Is familiar with RF circuit design and applications of RF semiconductor devices. Is capable of facilitating clear communication with external partners and internal stakeholders. Can perform risk assessment and manage risk mitigation activities for multiple projects in parallel. Is capable of independent project management from concept/planning phase through execution of transfer to high-volume manufacturing. Will typically possess a graduate degree in electrical engineering and have multiple years of experience in the field.

Key Qualifications

• 12+ years of experience in semiconductor process technology and RF circuit applications
• Experience as technical lead for device and/or IC technology development
• Experience with process design kit development and associated tools and concepts including layout design rules, device models, and parasitic modeling
• Experience with device and circuit DC and RF electrical characterization techniques
• Experience with parametric and yield data analysis. Proficiency with statistical data analysis tools
• Familiarity with device reliability and degradation mechanisms, test methods, and lifetime modeling
• Experience with yield failure mechanisms and tools for root cause finding (EFA, PFA)
• Exceptional data analysis, problem solving, and interpersonal skills

Education & Experience

MS or Ph

D in Electrical Engineering or related field:

Additional Job Description: Compensation and Benefits

The annual base salary range for this position is $141,300 - $226,000

This position is also eligible for a discretionary annual bonus in accordance with relevant plan documents, and equity in accordance with equity plan documents and equity award agreements.

Broadcom offers a competitive and comprehensive benefits package: Medical, dental and vision plans, 401(K) participation including company matching, Employee Stock Purchase Program (ESPP), Employee Assistance Program (EAP), company paid holidays, paid sick leave and vacation time. The company follows all applicable laws for Paid Family Leave and other leaves of absence.

Broadcom is proud to be an equal opportunity employer. We will consider qualified applicants without regard to race, color, creed, religion, sex, sexual orientation, national origin, citizenship, disability status, medical condition, pregnancy, protected veteran status or any other characteristic protected by federal, state, or local law. We will also consider qualified applicants with arrest and conviction records consistent with local law.If you are located outside USA, please be sure to fill out a home address as this will be used for future correspondence.